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Two-Dimensional Potential and Threshold Voltage Modeling of Work Function Engineered Double Gate High-k Gate Stack Schottky Barrier MOSFET

Crossref DOI link: https://doi.org/10.1007/s11664-019-07133-6

Published Online: 2019-03-22

Published Print: 2019-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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