Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer
Crossref DOI link: https://doi.org/10.1007/s11664-019-07193-8
Published Online: 2019-04-10
Published Print: 2019-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Uma, M.
Balaram, N.
Sekhar Reddy, P. R.
Janardhanam, V.
Rajagopal Reddy, V.
Yun, Hyung-Joong
Lee, Sung-Nam
Choi, Chel-Jong
Text and Data Mining valid from 2019-04-10
Article History
Received: 23 November 2018
Accepted: 3 April 2019
First Online: 10 April 2019