Semianalytical Threshold Voltage Model of a Double-Gate Nanoscale RingFET for Terahertz Applications in Radiation-Hardened (Rad-Hard) Environments
Crossref DOI link: https://doi.org/10.1007/s11664-019-07411-3
Published Online: 2019-07-16
Published Print: 2019-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Kunal
Kumar, S.
Tiwari, P. K.
Yadav, A. B.
Dubey, S.
Jit, S.
Text and Data Mining valid from 2019-07-16
Version of Record valid from 2019-07-16
Article History
Received: 25 December 2018
Accepted: 28 June 2019
First Online: 16 July 2019