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Effect of Ferroelectric Thickness Variation in Undoped HfO2-Based Negative-Capacitance Field-Effect Transistor

Crossref DOI link: https://doi.org/10.1007/s11664-019-07483-1

Published Online: 2019-08-06

Published Print: 2019-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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