Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon Nanowires
Crossref DOI link: https://doi.org/10.1007/s11664-019-07615-7
Published Online: 2019-09-11
Published Print: 2019-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ben Abdelaziz, B.
Radaoui, M. http://orcid.org/0000-0001-7457-2093
Ben Fredj, A.
Romdhane, S.
Ben Alaya, C.
Bouaïcha, M.
Bouchriha, H.
Text and Data Mining valid from 2019-09-11
Version of Record valid from 2019-09-11
Article History
Received: 4 March 2019
Accepted: 31 August 2019
First Online: 11 September 2019