Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications
Crossref DOI link: https://doi.org/10.1007/s11664-019-07731-4
Published Online: 2019-10-22
Published Print: 2020-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Murugapandiyan, P. http://orcid.org/0000-0002-2304-452X
Mohanbabu, A.
Lakshmi, V. Rajya
Wasim, Mohammed
Sundaram, K. Meenakshi
Text and Data Mining valid from 2019-10-22
Version of Record valid from 2019-10-22
Article History
Received: 22 July 2019
Accepted: 11 October 2019
First Online: 22 October 2019