Development of High-Temperature-Resistant Seed Layer for Electrodeposition of Copper for Microelectronic Applications
Crossref DOI link: https://doi.org/10.1007/s11664-019-07826-y
Published Online: 2019-11-26
Published Print: 2020-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Frost, Garrison
Ladani, Leila https://orcid.org/0000-0002-5715-9851
Funding for this research was provided by:
Directorate for Engineering (1734983)
Text and Data Mining valid from 2019-11-26
Version of Record valid from 2019-11-26
Article History
Received: 13 January 2019
Accepted: 12 November 2019
First Online: 26 November 2019