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Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

Published Online: 2020-03-26

Published Print: 2020-09

Authors

Chen, Jun

Yi, Wei

Kumar, Ashutosh

Iwanade, Akio

Tanaka, Ryo

Takashima, Shinya

Edo, Masaharu

Ito, Shun

Kimura, Takashi

Ohkubo, Tadakatsu

Sekiguchi, Takashi
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Text and Data Mining valid from 2020-03-26

Version of Record valid from 2020-03-26
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Article History

Received: 29 November 2019

Accepted: 13 March 2020

First Online: 26 March 2020

Document is current