Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance
Crossref DOI link: https://doi.org/10.1007/s11664-020-08140-8
Published Online: 2020-04-12
Published Print: 2020-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hosseini, Manouchehr
Babaee Touski, Shoeib
Text and Data Mining valid from 2020-04-12
Version of Record valid from 2020-04-12
Article History
Received: 23 November 2019
Accepted: 1 April 2020
First Online: 12 April 2020