Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices
Crossref DOI link: https://doi.org/10.1007/s11664-020-08318-0
Published Online: 2020-07-18
Published Print: 2020-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sharma, Chandan
Singh, Rajendra
Chao, Der-Sheng
Wu, Tian-Li https://orcid.org/0000-0001-6788-5470
Text and Data Mining valid from 2020-07-18
Version of Record valid from 2020-07-18
Article History
Received: 2 December 2019
Accepted: 7 July 2020
First Online: 18 July 2020
Conflict of interest
: The authors declare that they have no conflict of interest.