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Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowire n-MOSFETs

Crossref DOI link: https://doi.org/10.1007/s11664-020-08332-2

Published Online: 2020-08-01

Published Print: 2020-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sung, Wen-Li

Li, Yiming https://orcid.org/0000-0001-7374-0964
Funding

Funding for this research was provided by:

Ministry of Science and Technology, Taiwan (108-2221-E009-008)
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Text and Data Mining valid from 2020-08-01

Version of Record valid from 2020-08-01
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Article History

Received: 6 December 2019

Accepted: 13 July 2020

First Online: 1 August 2020

Conflict of interest

: The authors declare that they have no conflict of interest.

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