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Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield

Published Online: 2020-09-03

Published Print: 2020-11

Authors

Arbia, Marwa Ben https://orcid.org/0000-0002-7556-7111
Helal, Hicham

Saidi, Faouzi

Maaref, Hassen
License Information

Text and Data Mining valid from 2020-09-03

Version of Record valid from 2020-09-03
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Article History

Received: 17 February 2020

Accepted: 13 August 2020

First Online: 3 September 2020

Conflict of interest

: The authors declare that they have no conflicts of interest to disclose.

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