Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias
Crossref DOI link: https://doi.org/10.1007/s11664-020-08691-w
Published Online: 2021-01-03
Published Print: 2021-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lai, Yu-Chen
Zhong, Yi-Nan
Tsai, Ming-Yan
Hsin, Yue-Ming http://orcid.org/0000-0001-6733-4433
Text and Data Mining valid from 2021-01-03
Version of Record valid from 2021-01-03
Article History
Received: 16 June 2020
Accepted: 9 December 2020
First Online: 3 January 2021
Conflict of interest
: All authors declare that they have no conflict of interest.