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Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

Crossref DOI link: https://doi.org/10.1007/s11664-020-08691-w

Published Online: 2021-01-03

Published Print: 2021-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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