Lowering the Schottky Barrier Height by Titanium Contact for High-Drain Current in Mono-layer MoS2 Transistor
Crossref DOI link: https://doi.org/10.1007/s11664-021-08811-0
Published Online: 2021-03-16
Published Print: 2021-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sridevi, R.
Charles Pravin, J. https://orcid.org/0000-0002-9009-6274
Ramesh Babu, A.
Ajayan, J.
Text and Data Mining valid from 2021-03-16
Version of Record valid from 2021-03-16
Article History
Received: 20 October 2020
Accepted: 11 February 2021
First Online: 16 March 2021
Conflict of interest
: The authors declare that they have no conflict of interest.