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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Published Online: 2021-04-15

Published Print: 2021-06

Authors

Lee, Hsin-Ying

Chang, Ting-Wei

Lee, Ching-Ting https://orcid.org/0000-0001-8265-200X
Funding

Funding for this research was provided by:

Ministry of Science and Technology, Taiwan (MOST 108-2221-E-006-215-MY3, MOST 108-2221-E-155-029-MY3, MOST 109-2923-E-155-001)
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Text and Data Mining valid from 2021-04-15

Version of Record valid from 2021-04-15
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Article History

Received: 15 December 2020

Accepted: 11 March 2021

First Online: 15 April 2021

Conflict of interest

: The authors declare that they have no conflict of interest.

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