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Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes

Published Online: 2021-04-15

Published Print: 2021-06

Authors

Jadhav, Aakash

Dai, Yijun

Upadhyay, Prashant

Guo, Wei

Sarkar, Biplab https://orcid.org/0000-0003-0074-0626
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Text and Data Mining valid from 2021-04-15

Version of Record valid from 2021-04-15
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Article History

Received: 4 August 2020

Accepted: 17 March 2021

First Online: 15 April 2021

Conflict of interest

: The authors declare that they have no conflict of interest.

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