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Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

Published Online: 2021-07-05

Published Print: 2021-09

Authors

Chen, Chih-Wei

Kuo, Ling-Yun

Lai, Yu-Chen

Hsin, Yue-ming https://orcid.org/0000-0001-6733-4433
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Text and Data Mining valid from 2021-07-05

Version of Record valid from 2021-07-05
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Article History

Received: 20 March 2021

Accepted: 21 June 2021

First Online: 5 July 2021

Conflict of interest

: The authors declare that they have no conflict of interest.

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