Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode
Crossref DOI link: https://doi.org/10.1007/s11664-021-09254-3
Published Online: 2021-10-18
Published Print: 2021-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gullu, H. H.
Seme Sirin, D.
Yıldız, D. E. http://orcid.org/0000-0003-2212-199X
Text and Data Mining valid from 2021-10-18
Version of Record valid from 2021-10-18
Article History
Received: 22 April 2021
Accepted: 22 September 2021
First Online: 18 October 2021
Conflict of interest
: The authors declare that there are no conflicts of interest regarding the publication of this paper.