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Performance of Broken Gap MoO3/ZnS Heterojunctions as Abrupt Electronic Switches, MOSFETs, Negative Capacitance FETs and Bandpass Filters Suitable for 3G/4G Technologies

Crossref DOI link: https://doi.org/10.1007/s11664-021-09353-1

Published Online: 2022-01-09

Published Print: 2022-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Qasrawi, A. F. https://orcid.org/0000-0001-8193-6975
Yaseen, Nancy M. A.
Funding

Funding for this research was provided by:

Arab American University of Jenin

Istinye University, Istanbul, T R
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Text and Data Mining valid from 2022-01-09

Version of Record valid from 2022-01-09
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Article History

Received: 17 May 2021

Accepted: 16 November 2021

First Online: 9 January 2022

Conflict of interest

: The authors declare that they have no conflict of interest.

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