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Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport

Published Online: 2022-01-03

Published Print: 2022-02

Authors

Velpula, Ravi Teja

Jain, Barsha

Lenka, Trupti Ranjan

Wang, Renjie

Nguyen, Hieu Pham Trung https://orcid.org/0000-0003-1129-9581
Funding

Funding for this research was provided by:

National Science Foundation (ECCS-1944312)
License Information

Text and Data Mining valid from 2022-01-03

Version of Record valid from 2022-01-03
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Article History

Received: 12 September 2021

Accepted: 22 November 2021

First Online: 3 January 2022

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