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Gate Work Function-Engineered Graded-Channel Macaroni MOSFET: Exploration of Temperature and Localized Trapped Charge-Induced Effects with GIDL Analysis

Crossref DOI link: https://doi.org/10.1007/s11664-021-09419-0

Published Online: 2022-01-13

Published Print: 2022-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Banerjee, Pritha https://orcid.org/0000-0003-3691-638X
Das, Jayoti
Funding

Funding for this research was provided by:

Department of Science and Technology (DST), Ministry of Science and Technology, Government of India (File No. SR/WOS-A/PM-82/2018.)
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Text and Data Mining valid from 2022-01-13

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Article History

Received: 22 August 2021

Accepted: 23 December 2021

First Online: 13 January 2022

Conflicts of interest

: The authors declare that there is no Conflicts of interest/Competing interests.

: The authors declare their consent for publication upon acceptance of paper.

: The authors declare that all procedures followed were in accordance with the ethical standards.

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