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Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Power Switching Applications: A Simulation Study

Crossref DOI link: https://doi.org/10.1007/s11664-022-09767-5

Published Online: 2022-06-28

Published Print: 2022-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Tarauni, Yusuf U. https://orcid.org/0000-0003-0717-6845
Thiruvadigal, D. J.

Hotoro, Maitama

Koki, Fatima Salmanu

Murugapandiyan, P.
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Text and Data Mining valid from 2022-06-28

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Article History

Received: 19 January 2022

Accepted: 10 June 2022

First Online: 28 June 2022

Conflict of Interest

: On behalf of all authors, the corresponding author states that there is no conflict of interest.

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