The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer
Crossref DOI link: https://doi.org/10.1007/s11664-022-09869-0
Published Online: 2022-08-26
Published Print: 2022-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Usman, Muhammad http://orcid.org/0000-0003-3728-082X
Jamil, Tariq
Text and Data Mining valid from 2022-08-26
Version of Record valid from 2022-08-26
Article History
Received: 2 March 2022
Accepted: 2 August 2022
First Online: 26 August 2022
Conflict of interest
: The authors declare no conflicts of interest.