Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices
Crossref DOI link: https://doi.org/10.1007/s11664-022-10136-5
Published Online: 2022-12-14
Published Print: 2023-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Arun, N.
Nageswara Rao, S. V. S.
Pathak, A. P. http://orcid.org/0000-0002-6394-0943
Text and Data Mining valid from 2022-12-14
Version of Record valid from 2022-12-14
Article History
Received: 27 July 2022
Accepted: 29 November 2022
First Online: 14 December 2022
Conflict of interest
: The authors declare that they have no conflict of interest.