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The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study

Published Online: 2024-04-18

Published Print: 2024-07

Authors

Ye, Fengyu

Zhu, Ying

Yuan, Jun-Hui https://orcid.org/0000-0002-3892-604X
Wang, Jiafu
Funding

Funding for this research was provided by:

Major Project of Science and Technology, Hubei Province (2020AAA005)

National Science and Technology Major Project (2017ZX02301007-002)

the Fundamental Research Funds for the Central Universities (WUT: 2024IVA052)
License Information

Text and Data Mining valid from 2024-04-18

Version of Record valid from 2024-04-18
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Article History

Received: 19 November 2023

Accepted: 22 March 2024

First Online: 18 April 2024

Conflict of interest

: The authors declare that they have no conflicts interest.

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