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Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

Crossref DOI link: https://doi.org/10.1007/s11664-024-11100-1

Published Online: 2024-05-06

Published Print: 2024-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Venkatesan, R. S.

Manickam, Rajeswari

Duraipandi, Brindha

Sugathan, Krishnapriya Kottakkal
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Text and Data Mining valid from 2024-05-06

Version of Record valid from 2024-05-06
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Article History

Received: 16 December 2023

Accepted: 4 April 2024

First Online: 6 May 2024

Conflict of interest

: The authors declare that there is no conflict of interest reported in this paper.

: Not applicable.

: Not applicable as the manuscript does not contain any data from individual.

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