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Relationship Between Electrode Material, Valence Band Offset, and Nonlinearity in the Resistive Switching Behavior of Au/HfO2/M (M = TiN, W, Pt, or AlCu) Metal–Insulator–Metal Devices: Correlation Between Experimental and DFT Calculations

Crossref DOI link: https://doi.org/10.1007/s11664-024-11206-6

Published Online: 2024-06-15

Published Print: 2024-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Khaldi, Othmen https://orcid.org/0000-0001-6886-4567
Zemzemi, Mabrouk

Ferhi, Hanen

Jomni, Fethi
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Text and Data Mining valid from 2024-06-15

Version of Record valid from 2024-06-15
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Article History

Received: 5 February 2024

Accepted: 21 May 2024

First Online: 15 June 2024

Conflict of interest

: The authors declare no conflict of interest.

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