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Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate

Crossref DOI link: https://doi.org/10.1007/s11664-024-11289-1

Published Online: 2024-07-13

Published Print: 2024-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lino, L. https://orcid.org/0009-0004-1899-5912
Saravana Kumar, R.

Mohanbabu, A.

Murugapandiyan, P.
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Text and Data Mining valid from 2024-07-13

Version of Record valid from 2024-07-13
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Article History

Received: 11 December 2023

Accepted: 24 June 2024

First Online: 13 July 2024

Conflict of interest

: The authors declare that they have no conflict of interest.

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