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Correction: Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor

Crossref DOI link: https://doi.org/10.1007/s11664-024-11305-4

Published Online: 2024-07-09

Published Print: 2024-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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