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Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function

Crossref DOI link: https://doi.org/10.1007/s11664-024-11347-8

Published Online: 2024-08-07

Published Print: 2024-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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