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Proposal and Analysis of a High Read and Write Noise Margin 6T-SRAM Cell Using Novel Core Insulator Double-Gate (CIDG) MOSFETs

Crossref DOI link: https://doi.org/10.1007/s11664-024-11490-2

Published Online: 2024-10-07

Published Print: 2024-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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