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Insight on Work-Function and Gate Oxide-Engineered Negative-Capacitance TFET for Enhanced Analog/RF Performance and DC Characteristics in High-Frequency Applications

Crossref DOI link: https://doi.org/10.1007/s11664-024-11519-6

Published Online: 2024-10-25

Published Print: 2024-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sachan, Rajeev Kumar

Vedvrat,

Gupta, Vidyadhar

Bajpai, Shrish
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Text and Data Mining valid from 2024-10-25

Version of Record valid from 2024-10-25
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Article History

Received: 21 June 2024

Accepted: 30 September 2024

First Online: 25 October 2024

Conflict of interest

: The authors declare that there are no conflicts of interest.

: This research publication has the written permission of all authors.

: All authors provide their consent for its publication on acceptance.

: The authors affirm that they adhered strictly to all applicable ethical guidelines.

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