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Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance

Crossref DOI link: https://doi.org/10.1007/s11664-024-11548-1

Published Online: 2024-11-09

Published Print: 2025-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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