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Defect Characterization of HfTiOx Gate Dielectrics on SiGe Heterolayers Using Inelastic Tunneling Spectroscopy

Crossref DOI link: https://doi.org/10.1007/s11664-024-11550-7

Published Online: 2024-11-16

Published Print: 2025-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Maiti, Partha Pratim https://orcid.org/0000-0002-1139-459X
Mukherjee, C. https://orcid.org/0000-0002-8206-2779
Bag, A. https://orcid.org/0000-0002-9781-542X
Mallik, S. https://orcid.org/0000-0001-9232-7411
Maiti, C. K.
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Text and Data Mining valid from 2024-11-16

Version of Record valid from 2024-11-16
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Article History

Received: 27 April 2024

Accepted: 11 October 2024

First Online: 16 November 2024

Conflict of Interest

: The authors declare that they have no conflict of interest.