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Article History

Received: 12 June 2024

Accepted: 3 December 2024

First Online: 27 December 2024

Declarations

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: In line with our commitment to transparency and ethical conduct, we feel it is important to openly address any potential conflicts of interest related to our research titled 'Photoluminescence Enhancement of CVD-Grown MoS2 2D Films by p-Type Doping Using Oxygen Annealing Technique.' We want to clarify that none of the authors have financial or personal connections with individuals or organizations that could improperly influence our work or its interpretation.

: The study focuses on enhancing the photoluminescence (PL) properties of MoS2 films, a prominent 2D material, through p-type doping via oxygen annealing. MoS2 is a transition-metal dichalcogenide (TMD) known for its direct bandgap and high PL efficiency in its monolayer form, making it ideal for applications in optoelectronic devices. However, pristine MoS2 films often exhibit suboptimal PL due to their intrinsic n-type doping. This work aims to address this limitation by employing p-type doping with oxygen, utilizing a straightforward oxygen annealing technique. This method is compatible with existing device fabrication processes and offers a promising route for improving the performance of MoS2-based optoelectronic devices. Further exploration of doping levels and annealing conditions could optimize the PL enhancement, paving the way for more efficient MoS2-based applications.