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Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics

Crossref DOI link: https://doi.org/10.1007/s11664-024-11672-y

Published Online: 2024-12-30

Published Print: 2025-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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