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Impact of Gate Angle Variations on DC and RF Performance of Enhancement-Mode Al0.15Ga0.85N/GaN/Al0.07Ga0.93N MIS-HEMT Device

Published Online: 2025-01-17

Published Print: 2025-03

Authors

Lino, L.

Saravana Kumar, R.

Leeban Moses, M.

Mohanbabu, A.
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Text and Data Mining valid from 2025-01-17

Version of Record valid from 2025-01-17
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Article History

Received: 6 September 2024

Accepted: 27 December 2024

First Online: 17 January 2025

Conflict of interest

: The authors declare that they have no conflict of interest.

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