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Effect of Acceptor-Type Traps in GaN Buffer Layer on Current Collapse of ε-Ga2O3/GaN HEMTs

Published Online: 2025-02-21

Published Print: 2025-04

Authors

Qu, Andeng

Xie, Zhigao

Wang, Yan

Hu, Guofeng

Tan, Chee-Keong https://orcid.org/0000-0002-1776-4491
Funding

Funding for this research was provided by:

State Administration of Foreign Experts Affairs (No. QN2022030022L)

Guangzhou Municipal Science and Technology Project (No. 2023A03J0003)

Guangzhou Municipal Science and Technology Project (No. 2023A03J0013)

Guangzhou Municipal Science and Technology Project (No. 2023A04J0310)
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Text and Data Mining valid from 2025-02-21

Version of Record valid from 2025-02-21
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Article History

Received: 25 September 2024

Accepted: 4 February 2025

First Online: 21 February 2025

Conflict of interest

: The authors have no conflicts to disclose.

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