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Effect of Acceptor-Type Traps in GaN Buffer Layer on Current Collapse of ε-Ga2O3/GaN HEMTs

Published Online: 2025-02-21

Published Print: 2025-04

Authors

Qu, Andeng

Xie, Zhigao

Wang, Yan

Hu, Guofeng

Tan, Chee-Keong https://orcid.org/0000-0002-1776-4491
Funding

Funding for this research was provided by:

State Administration of Foreign Experts Affairs (No. QN2022030022L)

Guangzhou Municipal Science and Technology Project (No. 2023A03J0003, No. 2023A03J0013, No. 2023A04J0310)
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Text and Data Mining valid from 2025-02-21

Version of Record valid from 2025-02-21
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Article History

Received: 25 September 2024

Accepted: 4 February 2025

First Online: 21 February 2025

Conflict of interest

: The authors have no conflicts to disclose.

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