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A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery

Crossref DOI link: https://doi.org/10.1007/s11664-025-11892-w

Published Online: 2025-04-16

Published Print: 2025-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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