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A Quasi-3D Model of Gate-Induced Drain Leakage Current of a Trapezoidal GAA MOSFET

Published Online: 2025-09-19

Published Print: 2025-11

Authors

Sinha, Prity https://orcid.org/0009-0006-8020-4354
Maniyar, Ashraf

Raj, Pushp

Tiwari, Pramod Kumar
Funding

Funding for this research was provided by:

Ministry of Science and Technology, Taiwan (GITA/DST/TWN/P-89/2021)

Department of Science and Technology, Ministry of Science and Technology, India (SR/FST/ET- II/1078)
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Text and Data Mining valid from 2025-09-19

Version of Record valid from 2025-09-19
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Article History

Received: 30 May 2025

Accepted: 1 September 2025

First Online: 19 September 2025

Conflict of interest

: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

: All authors agree to publish this article in the Journal.

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