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Analysis and Modeling of the Drain Current of β-Ga2O3 Dual-Layer Channel JLFETs Considering the Impact of Doping Concentration and Thickness of NN+ Layers

Crossref DOI link: https://doi.org/10.1007/s11664-025-12430-4

Published Online: 2025-10-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Manukrishna, V. R.

Nikhil, K. S.
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Text and Data Mining valid from 2025-10-09

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Article History

Received: 11 May 2025

Accepted: 12 September 2025

First Online: 9 October 2025

Conflict of interest

: The authors declare that they have no conflict of interest.

: The authors affirm that the research was conducted in accordance with the principles of good scientific practice and integrity of the research. Consent to participate is not applicable.

: All authors agreed with the content and gave their explicit consent to submit the manuscript for publication.

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