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Research on High Threshold Voltage, High Output Current and Low Gate Leakage Current p-GaN and Grooved Gate Composite Gate HEMT with N-Well and AlGaN–GaN–AlGaN Double Barrier Cap Layer

Crossref DOI link: https://doi.org/10.1007/s11664-025-12465-7

Published Online: 2025-11-15

Published Print: 2026-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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