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Electrostatic Analysis of AlN/GaN HEMTs Using β-Ga2O3 Buffer on SiC and β-Ga2O3 Wafers for 5G/6G Wireless Infrastructure and Future Sub-THz Applications

Crossref DOI link: https://doi.org/10.1007/s11664-026-12678-4

Published Online: 2026-01-21

Published Print: 2026-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Mounika, B.

Ajayan, J.

Dwivedi, Amit Krishna https://orcid.org/0000-0002-8517-0775
Sharma, Pankaj

Sun, Shuxiang
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Text and Data Mining valid from 2026-01-21

Version of Record valid from 2026-01-21
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Article History

Received: 22 September 2025

Accepted: 2 January 2026

First Online: 21 January 2026

Conflict of interest

: The authors declare that they have no conflicts of interest regarding the publication of this paper.

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