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Mechanism of Nitrogen Doping Concentration Drift in 4H-SiC Epitaxial Layers Induced by Ring Coating Thickness

Published Online: 2026-02-23

Published Print: 2026-04

Authors

Zhong, Weiliang

Wang, Jiahui

Wang, Jiulong

Yao, Yong

Yang, Haifeng

Hou, Pengxiang

Yu, Le

Li, Zheyang https://orcid.org/0009-0002-5950-0467
Jin, Rui
Funding

Funding for this research was provided by:

Science and Technology Project of State Grid (5500-202399659A-3-2-ZN)
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Text and Data Mining valid from 2026-02-23

Version of Record valid from 2026-02-23
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Article History

Received: 23 October 2025

Accepted: 13 January 2026

First Online: 23 February 2026

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