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Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress

Crossref DOI link: https://doi.org/10.1007/s11668-024-02038-x

Published Online: 2024-09-13

Published Print: 2024-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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