Strain induced changes in performance of strained-Si/strained-Si1-y Ge y /relaxed-Si1-x Ge x MOSFETs and circuits for digital applications
Crossref DOI link: https://doi.org/10.1007/s11771-017-3527-4
Published Online: 2017-07-09
Published Print: 2017-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Subindu, Kumar
Amrita, Kumari
Mukul K, Das
License valid from 2017-06-01