Crossmark

Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO2:Y2O3/SrTiO3 thin films for non-volatile memory devices

Published Online: 2024-12-04

Published Print: 2024-10

Authors

Yang, Ze-ou

Huang, Xiao-zhong

Hu, Hai-long https://orcid.org/0000-0003-4107-2644
Ma, Bing-yang

Shang, Hai-long

Yue, Jian-ling https://orcid.org/0000-0002-1089-6934
License Information

Text and Data Mining valid from 2024-10-01

Version of Record valid from 2024-10-01
More Information

Article History

Received: 4 October 2023

Accepted: 27 February 2024

First Online: 4 December 2024

Conflict of interest

: YANG Ze-ou, HUANG Xiao-zhong, HU Hai-long, MA Bing-yang, SHANG Hai-long and YUE Jian-ling declare that they have no conflict of interest.

Document is current