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GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

Crossref DOI link: https://doi.org/10.1007/s11801-016-5251-y

Published Online: 2016-05-06

Published Print: 2016-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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