Optimization of GaAs-based 940 nm infrared light emitting diode with dual-junction design
Crossref DOI link: https://doi.org/10.1007/s11801-019-8113-6
Published Online: 2019-04-08
Published Print: 2019-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Hong-liang
Zeng, Xiang-hua
Shi, Shi-man
Tian, Hai-jun
Yang, Mo
Chu, Kai-ming
Yang, Kai
Li, Quan-su
Text and Data Mining valid from 2019-03-01
Article History
Received: 14 July 2018
Revised: 14 August 2018
First Online: 8 April 2019