InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers
Crossref DOI link: https://doi.org/10.1007/s11801-024-3099-0
Published Online: 2024-01-09
Published Print: 2024-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sang, Xien
Xu, Yuan
Yin, Mengshuang
Wang, Fang
Liou, Juin J.
Liu, Yuhuai
Text and Data Mining valid from 2024-01-09
Version of Record valid from 2024-01-09
Article History
Received: 6 June 2023
Revised: 16 August 2023
First Online: 9 January 2024
Ethics declarations
:
: The authors declare no conflict of interest.